? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c22a i dm t c = 25 c, pulse width limited by t jm 96 a i a t c = 25 c24a e as t c = 25 c3j dv/dt i s i dm , v dd v dss , t j 150 c 5 v/ns p d t c = 25 c 416 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting force 20..120 / 4.5..27 n/lb. weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 100 a v gs = 0v t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 12a, note 1 390 m hiperfet tm power mosfet isoplus247 tm (electrically isolated back surface) n-channel enhancement mode avalanche rated ixfr24n100 v dss = 1000v i d25 = 22a r ds(on) 390m g = gate d = drain s = source isolated tab isoplus247 e153432 ds98599c(10/08) t rr 250ns features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation ? low drain to tab capacitance(<30pf) ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? avalanche rated l ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? ac motor drives advantages ? easy assembly ? space savings ? high power density
ixfr24n100 ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. isoplus247 (ixfr) outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 12a, note 1 15 27 s c iss 8700 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 785 pf c rss 315 pf t d(on) 35 ns t r 35 ns t d(off) 75 ns t f 21 ns q g(on) 267 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 12a 52 nc q gd 142 nc r thjc 0.30 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 24 a i sm repetitive, pulse width limited by t jm 96 a v sd i f = 24a, v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1.0 c i rm 8.0 a i f = 24a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 12a r g = 1 (external)
? 2008 ixys corporation, all rights reserved ixfr24n100 fig. 1. output characteristics @ 25oc 0 4 8 12 16 20 24 0123456789 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 5v 6v 7v fig. 3. output characteristics @ 125oc 0 4 8 12 16 20 24 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 5v 6v fig. 4. r ds(on) normalized to i d = 12a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 24a i d = 12a fig. 5. r ds(on) normalized to i d = 12a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes
ixfr24n100 ixys reserves the right to change limits, test conditions, and dimensions. fig. 12. maximum transient thermal impedance 0.010 0.100 1.000 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 3.54.04.55.05.56.06.57.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 30 60 90 120 150 180 210 240 270 q g - nanocoulombs v gs - volts v ds = 500v i d = 12a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1mhz c iss c rss c oss ixys ref: f_24n100(9x)10-17-08-c
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